31% European Ingap/gaas/inganas Solar Cells for Space Application

نویسندگان

  • Roberta Campesato
  • Antti Tukiainen
  • Arto Aho
  • Gabriele Gori
  • Riku Isoaho
  • Erminio Greco
چکیده

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited by MOCVD. Repeatable cell characteristics and uniform efficiency pattern over 4-inch wafers were obtained. Combining the advantages offered by MBE and MOCVD opens a new perspective for fabrication of high-efficiency space tandem solar cells with three or more junctions. Results of radiation resistance of the sub-cells are also presented and critically evaluated to achieve high efficiency in EOL conditions.

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Ingap/gaas/inganas Solar Cells for Space Application

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تاریخ انتشار 2017